The road towards antiferromagnetic semiconductors
Xavi Marti
Charles University
In 1936, a 21-year old student wrote: "In the circuits of complex electrical systems it is frequently
necessary to make intrincate interconnections of relays and switches". After showing how to simplify
them, he concluded: "It is possible to perform [any] complex functions by means of such circuits". [1]
In 1947, Bell Labs announced a compact electrical-in electrical-out switch based on semiconductors -
the transistor. Recall that virtually any experience that surrounds us can be translated from/to
electrical signals: light, sound, pressure (displacement), information, ... as well as transmitted long
distances. It was a matter of time to fabricate any compact machine with any purpose.
But the main character, the electron, has "spin". The marriage of charge and spin in metals, the socalled
giant magnetoresistance, led to an improvement in data storage. But by using semiconductors
there may be yet the possibility to edit the functions that process the data. Recall that, in our brains,
both our data and functions change by re-arranging our electrical switches (neurons).
In the last decade, spin-semiconductor-based switches have been developed using ferromagnets but,
unfortunately, operating below room temperature. In 45 minutes, we will discuss the alternatives
with antiferromagnetic semicondcutors. Our recent work comprises the demonstration that
materials for room temperature operation can be prepared [2] and the manipulation of antiferrromagnetic-based switches [3].
[1] Claude Shannon, Master thesis, "A symbolic analysis of relay and switching circuits".
[2] T. Jungwirth, et al., Phys. Rev. B 83, 035321 (2011)
[3] B-G. Park, et al., Nature Materials 10, 347–351 (2011)
4:00 p.m., Physics Research Building (PRB), Room 1080
Reception at 3:45 p.m., Atrium, PRB
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